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Fabrication and ferroelectric properties of highly dense lead-free piezoelectric (K_(0.5)Na_(0.5))NbO_3 thick films by aerosol deposition

机译:气溶胶沉积制备高密度无铅压电(K_(0.5)Na_(0.5))NbO_3厚膜及其铁电性能

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摘要

Lead-free piezoelectric thick films of (K_(0.5)Na_(0.5))NbO_3 were fabricated by aerosol-deposition method. The thickness of KNN film was 7.1 μm and fully dense films were obtained. The dielectric constants ε_3~T/ε_0 of the as-deposited and annealed films at 1 kHz were 116 and 545, respectively, which are higher than any previously reported values for lead-free piezoelectric thin/thick films, either without or with heat treatment. The ferroelectric properties were improved after annealing and the maximum values of P_r=8.1 μC/cm~3 and E_c = 100kV/cm were achieved. These values are markedly superior to those of sintered KNN ceramic counterparts.
机译:通过气溶胶沉积法制备了(K_(0.5)Na_(0.5))NbO_3的无铅压电厚膜。 KNN膜的厚度为7.1μm,并且获得了完全致密的膜。沉积和退火后的薄膜在1 kHz时的介电常数ε_3〜T /ε_0分别为116和545,这比先前报道的无铅压电薄膜/厚膜在未经热处理或经过热处理的情况下均高。 。退火后铁电性能得到改善,P_r =8.1μC/ cm〜3,E_c = 100kV / cm达到最大值。这些值明显优于烧结的KNN陶瓷对应物。

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