Laser Annealing of Plasma Deposited High T sub c Superconducting Thick Films and Devices. Final Report on Phase 2

摘要

Applications of high Tc superconducting thick films have been limited because of extreme anisotropy of randomly-oriented grains in polycrystalline thick films, highly resistive grain boundaries, microcracking at the grain boundaries, and the existence of intergranular phases. To address these problems, researchers optimized the process parameters for producing device-quality polycrystalline high Tc superconducting thick films using plasma spraying to deposit amorphous and crystalline superconducting thick films. Laser annealing techniques were extended to promote cationic diffusion to reduce interdiffusion between film and substrate in as-deposited superconducting thick films. Laser patterning techniques were optimized to complete the device fabrication process.