Improvement in ferroelectric properties of PZT thick films prepared by a modified sol-gel technique using low temperature laser annealing

摘要

Low temperature continuous-wave CO2 laser annealing technique was successfully adopted to fabricate ferroelectric Pb(Zr0.52Ti0.48)O3(PZT) thick films of different thickness on a Pt/Ti/SiO2/Si substrate using powder-mixing and sol-gel spin coating process. X-ray diffractometer (XRD) results showed that laser annealing provides an extremely efficient way to crystallize the materials. Films of type-I with thickness of 5μm showed cracks and rough surface morphology, indicating the importance of controlling interfacial stress and choosing appropriate size of the mixing powders. Better microstructure was observed in the type-II films. Type-II PZT film 5μm thick and annealed at 121Wcm2 exhibited better ferroelectric properties (Pr=15.86μCcm2) compared to type-IPZT film. The results indicated that porosity and electrical properties of thick films can be controlled using appropriate processing parameters, suggesting the applicability of continuous-wave CO2 laser annealing in the fabrication of PZT films.