EXTREMELY SCALABLE CROSS-POINT TOP-GATED HETEROJUNCTION TUNNELING-TRANSISTORS

摘要

Energy efficient hetero-junction tunneling transistors in a simple "cross-point" configuration that utilizes top gates are analyzed for use at extremely scaled sub-10 nm gate-lengths. The active tunneling region comprises of a vertical p+++ heterojunction (for example formed at the cross point of p++SiGe+Si), where modulation of the energy-bands in the gated n+ Si region with a topgate is used to control the degree of band overlap and tunneling distance and hence current. The subthreshold swing characteristic of these devices is shown to be potentially highly immune to extreme downscaling to 6 nm gate length allowing for an intact and efficient switching behavior to be retained. The extreme scalability and ultra-low voltage operation could make such cross-point devices useful for alternative applications and architectures that require ultimate energy efficiency.