A Novel Ferroelectric FET Based Memory Cell of Minimum Size and Non-Destructive Reading

摘要

We propose a single device, which can perform the function of a ferroelectric inverter and be used as a basic cell of ferroelectric random access memory (FRAM) with non-destructive read out (NDRO). This device has a minimized geometry suitable for high density integration. The write voltage required is the same lowest possible level for "0" and "1" states. Consequently, such a device as a FRAM cell can be operated at low voltages for both READ and WRITE operations with minimum power consumption. A preliminary testing device was fabricated using conventional dielectrics in place of ferroelectrics, and it worked as expected.