首页> 中文期刊>电子设计工程 >OTP存储器存储单元内寄生电容对读取阈值的影响

OTP存储器存储单元内寄生电容对读取阈值的影响

     

摘要

To obtain the largest reading threshold of the programmed one time programmable memory during the design of the one time programmable memory, this paper takes the method of eliminating the parasitic capacitance in the memory cell. By the simulation and comparison of the reading threshold with and without the parasitic capacitance, this paper finds out that the existence of the parasitic capacitance leads to the decrease of the reading threshold about 8k ohm. So the designer should eliminate the parasitic capacitance in the memory cell to get the largest reading threshold during the design.%在OTP存储器的设计中,基于得到OTP存储器存储单元编程后尽可能大的读取阈值的目的,以提高OTP存储器的编程效率和芯片成品率,采用了消除存储单元内寄生电容的方法,通过对OTP存储器存储单元内带寄生电容和不带寄生电容两种情况下的仿真以及对比,可以发现存储单元内寄生电容的存在会使OTP存储器编程后的读取阈值减少8 kΩ左右,所以在OTP存储器的设计中,应尽可能消除掉存储单元内的寄生电容,获得尽可能大的读取阈值。

著录项

相似文献

  • 中文文献
  • 外文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号