A METHOD FOR ADDRESSING OF A FERROELECTRIC OR ELECTRET MEMORY CELL, A METHOD FOR NON-DESTRUCTIVE READOUT OF A STORED LOGIC VALUE IN A FERROELECTRIC OR ELECTRET MEMORY CELL AND A METHOD FOR STORING AND ACCESSING DATA IN A FERROELECTRIC OR ELECTRET MEMORY DEVICE

摘要

It is for storage of data and the method to enhance the data storage capabilities of ferroelectric or electret memory cell reaches an imprint condition, suitable voltage pulses imprint condition into a volatile polarization state that can be discriminated from the imprinted polarization state when a non-destructive read operation It is used in order to cause the palliation. One or more sequences of voltage pulses are used to cause a read signal that represents each of the non-volatile and a volatile polarization state of the memory cell without changing the polarization state. Imprinted memory cell is a first logical value to imprinted memory assigned to the cell, temporarily-volatile storage of data in the memory device of the second to give a logical value of a ferroelectric or electret memory device by the conversion to a relaxed volatile state memory cells selected transform give overlap and influence the writing, whereby the stored logical values ​​can be distinguished by detecting the difference in dynamic response of respectively imprinted and relaxed memory cells.