Ferroelectric random access memory devices with short-lived cell detectors available for life testing ferroelectric capacitors and test methods for ferroelectric memory cells

摘要

Ferroelectric random access memory devices store data bits in a pair of ferroelectric capacitors (CP1 / CP2) with a residual polarization that varies along the hysteresis loop, and sense amplifiers (OSA0 to OSAm; SA10 to SA1m) because of residual polarization Increasing the magnitude of the potential difference generated in the pair of bit lines (BLT0 / BLN0 to BLTm / BLNm), and the nonsensing voltage range of the sense amplifier is a life test for the pair of ferroelectric capacitors to screen short-live ferroelectric capacitors. Intentionally increased.