Rectifying Properties of p-GaN Nanowires and an n-Silicon Heterojunction Vertical Diode

摘要

The heterojunction of a Pd-doped p-GaN nanowire and n-Si (100) is fabricated vertically by the vaporHjquid-solid method. The average diameter of the nanowire is 40 nm. The vertical junction reveals a significantly high rectification ratio of 10~3 at 5 V, a moderate ideality factor of ～2, and a high breakdown voltage of ～40 V. The charge transport across the p—n junction is dominated by the electron-hole recombination process. The voltage dependence of capacitance indicates a graded-type junction. The resistance of the junction decreases with an increase in the bias voltage confirmed by impedance measurements.