Rectifying properties of solid C_60-GaN, C_70-GaN and C_70/p-GaN heterojunctions

摘要

Current-voltage measurements show that C_60-GaN, C_70-GaN and C_70/p-GaN contacts have very good rectification characteristics, however, the polarities of the forward biases for C_60-GaN (C_70-GaN) and C_70/p- GaN are opposite to each other. By fitting forward current-voltage data, the relations of both the series resistance and ideality factor vs forward bias for C_60-GaN and C_70-GaN have been obtained. Thermal activation measurements at a fixed forward bias reveal exponential relations of currents vs the reciprocal of temperature. The effective barrier heights for C_6o-GaN and C_70-GaN are determined to be 0.535 and 0.431 eV, respectively.