首页> 外国专利> PN HETEROJUNCTION DIODE CONSTRUCTED WITH NANOWIRE AND NANOPARTICLE THIN FILM AND METHOD FOR FABRICATING THE SAME

PN HETEROJUNCTION DIODE CONSTRUCTED WITH NANOWIRE AND NANOPARTICLE THIN FILM AND METHOD FOR FABRICATING THE SAME

机译:纳米和纳米微粒薄膜构成的PN异质结二极管及其制造方法

摘要

PURPOSE: A PN hetero junction diode and a manufacturing method thereof are provided to improve an operating speed by joining a nano particle layer to a nano wire to be crossed. CONSTITUTION: A nano wire is formed on the upper part of a dielectric layer. A line patterned nano particle layer is formed on the upper part of the nano wire and the dielectric layer. The nano particle layer is welded with the nano wire. A first electrode and a second electrode are formed in both ends of the nano particle layer. A third electrode and a fourth electrode are formed in both ends of the nano wire.
机译:目的:提供一种PN异质结二极管及其制造方法,以通过将纳米颗粒层接合至要交叉的纳米线来提高操作速度。组成:纳米线形成在介电层的上部。在纳米线和介电层的上部上形成线图案化的纳米粒子层。纳米颗粒层与纳米线焊接在一起。在纳米粒子层的两端形成有第一电极和第二电极。在纳米线的两端形成有第三电极和第四电极。

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