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机译:由n型ZnO纳米线和p型HgTe纳米颗粒薄膜构成的pn异质结二极管
Department of Electrical Engineering and Institute for Nano Science, Korea University, Seoul 136-713, Republic of Korea;
Department of Electrical Engineering and Institute for Nano Science, Korea University, Seoul 136-713, Republic of Korea;
Department of Electrical Engineering and Institute for Nano Science, Korea University, Seoul 136-713, Republic of Korea;
机译:Cu_2O纳米粒子膜和单根ZnO纳米线构成的平面pn异质结二极管的表征
机译:低损伤磁控溅射n型ZnO薄膜/ p型Cu_2O片异质结太阳能电池的光伏性能
机译:使用p型SnO和n型SnO_2薄膜的同质结pn二极管
机译:β-Fesi_2薄膜外延生长的必要性,形成n型β-Fesi_2 / p型Si异质结光电二极管
机译:p型氟化钡铜,氟化钡铜硒,氟化钡铜碲和n型氧化锌铟宽带隙半导体的脉冲激光沉积和薄膜特性。
机译:在p型CdTe薄膜上无催化剂和无模板的n型CdS纳米线的低温原位生长和p-n异质结性能
机译:掺杂浓度对由化学浴沉积法生长的内在N型ZnO(I-ZnO)和(Cu,Na和K)掺杂P型ZnO薄膜的光学和电性能的影响