Homo-Junction pn Diode Using p-Type SnO and n-Type SnO_2 Thin Films

摘要

Tin oxide thin films are of great interest for device applications, but in spite of their good optical transparency and outstanding semiconductor properties, stable p-type tin oxide needs to be developed. In this study both p-type SnO and n-type SnO_2 thin films were deposited by reactive rf magnetron sputtering using Sn target in Ar and O_2 gas mixture. The structural, electrical, and optical properties of both p-type SnO and n-type SnO_2 thin films were analysed. The transparent homo-junction pn diode was also fabricated and it showed a fairly good rectification behavior with a turn-on voltage of 2.3 V.