P-TYPE CONDUCTIVE SB DOPED SNO₂ THIN FILM, TIN OXIDE HOMOGENOUS PN JUNCTION CONTAINING SAME, AND METHODS FOR PREPARATION THEREOF

摘要

Provided are a p-type conductive Sb doped SnO₂ thin film, a tin oxide homogenous pn junction containing same, and methods for preparation thereof. A method for preparing a p-type Sb doped SnO₂ thin film comprises using Sb doped SnO₂ ceramic target material and using a magnetron sputtering method to carry out the preparation on a single crystal Si or a quartz glass; and the tin oxide homogenous pn junction is obtained by sputtering and depositing a n-type Sb doped SnO₂ thin film onto the p-type Sb doped SnO₂ thin film. The p-type conductive Sb doped SnO₂ thin film has a stable electrical conductive performance, a high hole concentration, hole mobility and conductivity, having a hole concentration of up to an order of magnitude of 10²⁰cm^-3, a conductivity of up to 60S∙cm^-1 and at the same time a hole mobility of up to 2-30cm²∙V^-1∙s^-1, and a high transparency for visible light. The method for preparation thereof has simple processes, has good reproducibility, and is easy to use industrially. The prepared homogenous tin oxide-based transparent pn junction has the current-voltage profile characteristics of a semiconductor pn junction with a wide band gap.