机译:通过分子束外延对GaAs(001)衬底的INAS_(1-X)SB_X癫痫的研究
Institute of Applied Physics Military University of Technology 2 Kaliskiego Str. 00-908 Warsaw Poland;
Vigo System S.A. 129/133 Poznańska Str. 05-850 O?arów Mazowiecki Poland;
Institute of Applied Physics Military University of Technology 2 Kaliskiego Str. 00-908 Warsaw Poland;
Vigo System S.A. 129/133 Poznańska Str. 05-850 O?arów Mazowiecki Poland;
Institute of Applied Physics Military University of Technology 2 Kaliskiego Str. 00-908 Warsaw Poland;
Vigo System S.A. 129/133 Poznańska Str. 05-850 O?arów Mazowiecki Poland;
Institute of Applied Physics Military University of Technology 2 Kaliskiego Str. 00-908 Warsaw Poland;
MBE; InAsSb; Hall effect; GaAs; X-ray diffraction;
机译:通过分子束外延对GaAs(001)衬底的INAS_(1-X)SB_X癫痫的研究
机译:分子束外延在(001)GaAs衬底上生长的闪锌矿Ga_(1-x)Mn_xN外延层的结构表征
机译:分子束外延在GaAs(0 0 1)上生长铁磁MnAs_(1-x)Sb_x膜和MnSb / MnAs / MnAs_(1-x)Sb_x多层膜
机译:GaAs(001)衬底上分子束外延生长碳掺杂立方GaN外延层的光学性质
机译:Si(1-x)Ge(x)(001)气源分子束外延期间的超高B掺杂:层生长动力学,掺杂剂掺入,电激活和载流子传输的机理研究。
机译:分子束外延生长GaAsSb外延层中的局部状态研究
机译:GaAs(001)上通过分子束外延生长的ZnTe外延层的衬底温度依赖性
机译:mBE(分子束外延)在低衬底温度和生长速率下生长的Gaas薄膜的研究。