Structural characterization of zincblende Ga_(1-x)Mn_xN epilayers grown by molecular beam epitaxy on (001) GaAs substrates

摘要

Zincblende p-type Ga_(1-x)M_xN epilayers, grown with and without AlN/GaN buffer layers using plasma-assisted molecular beam epitaxy on (001) oriented GaAs substrates, have been investigated using a variety of complementary transmission electron microscopy techniques. The epilayers were found to contain a high anisotropic density of stacking faults and microtwins. MnAs inclusions were identified at the Ga_(1-x)Mn_xN/(001)GaAs interface extending into the substrate. The use of AlN/GaN buffer layers was found to inhibit the formation of these inclusions.