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Investigation of GaAs Films Grown by MBE (Molecular Beam Epitaxy) at Low Substrate Temperatures and Growth Rates.

机译：mBE（分子束外延）在低衬底温度和生长速率下生长的Gaas薄膜的研究。

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Metze, G. M.; Calawa, A. R.; Mavroides, J. G.;
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年度 1983
页码 1-6
总页数 6
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Epitaxial growth; Gallium arsenides; Thin films; Substrates; Low temperature; Rates; Morphology; Crystal defects; Electrical properties; Photoluminescence; Molecular beams; Reprints; Molecular beam epitaxy; Semiconducting films;

机译：外延生长;砷化镓;薄膜;基板;低温;速率;形态学;晶体缺陷;电学性质;光致发光;分子束;重印;分子束外延;半导体薄膜;

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专利

1. Influence of growth temperatures on the quality of InGaAs/GaAs quantum well structure grown on Ge substrate by molecular beam epitaxy [J] . He Jifang, Shang Xiangjun, Li Mifeng, Journal of Semiconductors . 2011,第4期

机译：生长温度对分子束外延生长在Ge衬底上的InGaAs / GaAs量子阱结构质量的影响
2. Photoluminescence spectra of undoped GaAs grown by molecular‐beam epitaxy at very high and low substrate temperatures [J] . Journal of Applied Physics . 1986,第3期

机译：分子束外延在极高和极低的衬底温度下生长的未掺杂GaAs的光致发光光谱
3. High Gain and High Sensitive Blue-Ultraviolet Avalanche Photodiodes (APDs) of ZnSSe n~+-i-p Structure Molecular Beam Epitaxy (MBE) Grown on p-type GaAs Substrates [J] . Tomoki ABE, Koshi ANDO, Katsushi IKUMI, Japanese Journal of Applied Physics. Part 2, Letters . 2005,第16a19期

机译：在p型GaAs衬底上生长的ZnSSe n〜+ -i-p结构分子束外延（MBE）的高增益和高灵敏度蓝紫外雪崩光电二极管（APD）
4. Growth and characterization of (Zn, Sn, Ga)As2 thin films grown on GaAs(001) substrate by molecular beam epitaxy [C] . Hideyuki Toyota, Tatsuya Terauchi, Shiro Hidaka, 2016 Compound Semiconductor Week Includes 28th International Conference on Indium Phosphide amp; Related Materials amp; 43rd International Symposium on Compound Semiconductors . 2016

机译：GaAs（001）衬底上生长的（Zn，Sn，Ga）As2薄膜的分子束外延生长和表征
5. Electrical characterization of nonstoichiometric GaAs grown at low temperature by molecular beam epitaxy. [D] . Ibbetson, James Paul. 1997

机译：分子束外延在低温下生长的非化学计量砷化镓的电学表征。
6. Magnetotransport in an aluminum thin film on a GaAs substrate grown by molecular beam epitaxy [O] . Shun-Tsung Lo, Chiashain Chuang, Sheng-Di Lin, 2011

机译：通过分子束外延生长在GaAs衬底上的铝薄膜中的磁传输
7. Critical Current Density of As-grown MgB₂ Films Fabricated by Molecular Beam Epitaxy under Low-growth Rate and Low-temperature Conditions [O] . Yoshitomo HARADA, Hiroki IRIUDA, Terukazu TAKAHASHI, 2005

机译：低生长速率和低温条件下由分子束外延制造的临界电流密度的劣化MGB _{2 薄膜}
8. Investigation of GaAs Films Grown by MBE (Molecular Beam Epitaxy) at Low Substrate Temperatures and Growth Rates [R] . Metze, G. M., Calawa, A. R., Mavroides, J. G. 1983

机译：mBE（分子束外延）在低衬底温度和生长速率下生长的Gaas薄膜的研究

Investigation of GaAs Films Grown by MBE (Molecular Beam Epitaxy) at Low Substrate Temperatures and Growth Rates.

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