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Critical Current Density of As-grown MgB₂ Films Fabricated by Molecular Beam Epitaxy under Low-growth Rate and Low-temperature Conditions

机译：低生长速率和低温条件下由分子束外延制造的临界电流密度的劣化MGB _{2 薄膜}

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Yoshitomo HARADA; Hiroki IRIUDA; Terukazu TAKAHASHI; Yoshiki NAKANISHI; Satoru NOGUCHI; Takekazu ISHIDA; Masahito YOSHIZAWA;
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年度 2005
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1. High critical current density under magnetic fields in as-grown MgB2 thin films deposited by molecular-beam epitaxy [J] . Hurata M, Fujiyoshi T, Kihara S, Superconductor Science & Technology . 2007,第1期

机译：分子束外延沉积生长的MgB2薄膜在磁场下的高临界电流密度
2. Upper critical field of as-grown MgB2 thin films by molecular beam epitaxy [J] . Harada Y, Udsuka M, Takahashi T, Physica, B. Condensed Matter . 2005,第0期

机译：分子束外延法生长MgB2薄膜的上临界场
3. Anisotropy and critical current density of MgB2 thin films grown in-situ by molecular beam epitaxy [J] . Jo W., Beasley M.R., Hammond R.H. IEEE Transactions on Applied Superconductivity . 2003,第2期

机译：通过分子束外延原位生长的MgB2薄膜的各向异性和临界电流密度
4. Effect of substrate temperature on structural and optical properties of ZnO:Co thin films fabricated by laser molecular beam epitaxy [C] . Xiangang Wang International Conference on Materials and Products Manufacturing Technology . 2014

机译：基材温度对激光分子束外延制造的ZnO：CO薄膜结构和光学性能的影响
5. Study of ion beam assisted deposition of low dislocation density gallium nitride thin films using molecular beam epitaxy. [D] . Cui, Bentao. 2005

机译：利用分子束外延研究低位错密度氮化镓薄膜的离子束辅助沉积。
6. Enhancement of the critical current density in FeO-coated MgB2 thin films at high magnetic fields [O] . Andrei E Surdu, Hassan H Hamdeh, I A Al-Omari, 2015

机译：FeO包覆的MgB2薄膜在高磁场下的临界电流密度的提高
7. Synthesis of as-grown superconducting MgB_2 thin films by molecular beam epitaxy in UHV conditions [O] . Harada, Y., Udsuka, M., Nakanishi, Y., 2004

机译：分子束合成生长的超导mgB_2薄膜在特高压条件下外延
8. Characterization of Copper Iodide Thin Films Fabricated via Laser AssistedMolecular Beam Epitaxy [R] . Weijekoon, W. M., Lyktey, M. Y., Prasd, P. N., 1993

机译：激光辅助分子束外延法制备碘化铜薄膜的表征

Critical Current Density of As-grown MgB2 Films Fabricated by Molecular Beam Epitaxy under Low-growth Rate and Low-temperature Conditions

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Critical Current Density of As-grown MgB₂ Films Fabricated by Molecular Beam Epitaxy under Low-growth Rate and Low-temperature Conditions