Deep 3D X-ray Lithography Based on High-Contrast Resist Layers

摘要

In classical X-ray lithography, the mask and resist layer are arranged perpendicular to the incident X-ray beam. Being absorbed in the resist layer, the X-ray beam induces a response in the form corresponding to its cross section. However, using a tilt and rotation of the mask/resist and sequential repeated exposures, it is possible to create three-dimensional forms that are accurate to within less than a micron. New approaches to the creation of 3D microstructures by deep X-ray lithography are described, which can ensure the formation of relatively large arrays.