Self-Aligned Indium Gallium Zinc Oxide Thin-Film Transistor with Source/Drain Regions Treated by NH_3 Plasma

摘要

We present the impact of S/D contact formation by NH_3, N_2 and He plasma treatment, respectively. NH_3 plasma treatment showed the best electrical properties during the unit test. Furthermore, the self-aligned a-IGZO TFT was used NH_3 treatment, with a V_(th) shift of 0.2 V for the positive bias temperature stress.