Solution-processed Oxide Thin-Film Transistor with Spin-coated Zinc Tin Oxide Active Layer and Indium Zinc Oxide Source/Drain Electrodes

摘要

Recently, transparent conductive oxides (TCOs) and amorphous oxide semiconductors (AOSs) such as zinc oxide (ZnO), tin oxide (SnO_2 and indium zinc oxide (IZO) have attracted considerable attention for various electronic applications like flat-panel displays (FPDs) and active channel materials for thin film transistors (TFTs). Especially, oxide-based TFTs have been attracting considerable attention for the driving elements of active matrix display as well as peripheral circuit element due to their high mobility, visible light transparency and potential uniformity. (1-3)