机译:用于所有溶液处理的氧化物薄膜晶体管中的源/漏电极的燃烧合成铟锡氧化物(ITO)薄膜
School of Materials Science, Japan Advanced Institute of Science and Technology, Nomi, Ishikawa 923-1292, Japan,Core Research for Evolution Science and Technology (CREST), Japan Science and Technology Agency, Kawaguchi, Saitama 332-0012, Japan,ERATO Shimoda Nano-Liquid Process Project, Japan Science and Technology Agency, Nomi, Ishikawa 923-1292, Japan;
Green Devices Research Center, Japan Advanced Institute of Science and Technology, Nomi, Ishikawa 923-1292, Japan,ERATO Shimoda Nano-Liquid Process Project, Japan Science and Technology Agency, Nomi, Ishikawa 923-1292, Japan;
School of Materials Science, Japan Advanced Institute of Science and Technology, Nomi, Ishikawa 923-1292, Japan,Core Research for Evolution Science and Technology (CREST), Japan Science and Technology Agency, Kawaguchi, Saitama 332-0012, Japan;
School of Materials Science, Japan Advanced Institute of Science and Technology, Nomi, Ishikawa 923-1292, Japan,Green Devices Research Center, Japan Advanced Institute of Science and Technology, Nomi, Ishikawa 923-1292, Japan,ERATO Shimoda Nano-Liquid Process Project, Japan Science and Technology Agency, Nomi, Ishikawa 923-1292, Japan;
机译:铟锡氧化物前体凝胶的直接压印并同时在薄膜晶体管中形成沟道和源极/漏极
机译:完全喷墨印刷的短通道金属氧化物薄膜晶体管,基于半透明ITO / AU源/漏电极
机译:顶栅铟镓锌氧化锌透明薄膜晶体管ITO源/漏电极的工艺开发
机译:具有旋涂锌氧化锡有源层和氧化铟锌源/漏电极的固溶处理氧化物薄膜晶体管
机译:固溶处理后过渡金属氧化物半导体电子产品:高性能薄膜晶体管和/或低温处理薄膜
机译:源/漏电极对氧化硅锡薄膜晶体管电性能的影响
机译:与印刷薄膜晶体管应用的多功能溶液加工的氧化物半导体兼容的可打印源/漏电极中的AG迁移问题