Fully Inkjet-Printed Short-Channel Metal-Oxide Thin-Film Transistors Based on Semitransparent ITO/Au Source/Drain Electrodes

摘要

In this work, short-channel semitransparent indium-tin-oxide (ITO)/Au electrode pairs were fabricated via inkjet printing and lift-off technology. The printed hydrophobic coffee stripes not only define the channel length of ITO/Au electrode pairs, but also help the realization of uniform short-channel In0.95Ga0.05Ox thin-film transistors (TFTs). The patterned semitransparent ITO/Au films, with the assistance of inkjet printing, exhibit an excellent conductivity compared to that of printed ITO films, and the short-channel In0.95Ga0.05Ox TFTs based on the semitransparent ITO/Au source/drain electrodes exhibit a maximum mobility of 2.9 cm2 V?1 s?1. This work proposes a method to prepare patterned high-conductive electrodes for TFTs with the assistance of inkjet printing.