Organic Thin-Film Transistors with Conductive Metal-Oxides as Source-Drain Electrodes

摘要

We demonstrated that bottom contact (BC) configuration organic thin-film transistors (OTFTs) easily get higher performance by using conductive metal oxide (CMO) as source and drain electrodes. Although BC-OTFTs are more advantageous than top contact (TC) configuration in the viewpoint of device fabrications, it is also well-known that BC-OTFTs show poor performance compared with TC-OTFTs with the same active material. We found out that using CMO like indium tin oxide as contact electrodes enhanced performance of BC-OTFTs without any special surface treatments. This manner was truly effective for most organic semiconducting materials, for example, pentacene, polythiophene, and so on.