低电压有机薄膜晶体管驱动顶发射有机发光二极管的集成像素的研制

摘要

研究了有机薄膜晶体管( OTFT)驱动顶发射有机发光二极管( OLED)的集成制备技术。通过减小栅绝缘层的厚度,达到降低OTFT工作电压的目的。 OLED采用标准的绿光器件,利用超薄的Al薄膜作为半透明阴极实现顶发射功能。实现了低电压工作的OTFT与顶发射OLED的集成,其中OTFT的阈值电压为2.0 V,饱和场效应迁移率为0.40 cm2·V-1·s-1。基于实验数据,对集成像素的电特性进行了计算分析,在-5~-10 V的栅电压调控下,像素亮度能在50~250 cd/m2的范围内实现线性灰度调控。%The integration of the top-emitting organic light-emitting diode ( OLED) driven by the or-ganic thin film transistor ( OTFT) was investigated. The OTFT operating voltage is decreased via re-ducing the thickness of the gate insulator layer. OLED adopts standard devices structure with green emission and employs the thin Al film as transparent cathode to realize top-emission. The integration of low-voltage operation OTFT and top-emitting OLED is achieved, while the threshold voltage of the OTFT is 2. 0 V and the saturation field effect mobility is 0. 40 cm2 ·V-1 ·s-1 . Based on the exper-imental data, the electrical characteristic of the integrated pixel is calculated and analyzed. Under the control of gate voltage from -5 to -10 V, the linear gray-scale control can be realized within the range of pixel brightness from 50 to 250 cd/m2 .