Metal-oxide semiconductor transistor e.g. power transistor, has arrangement of base cells connected parallel to substrate and with central drain region, ring-shaped gate closed and source region arranged outside of gate

摘要

The transistor has an arrangement of base cells connected parallel to a substrate and including a central drain region (D), a ring-shaped gate closed about the drain region and a source region (S) arranged outside of the gate. Each base cell has a square surface area and a common side edge, and the source region is connected by the base cells. The gate has a poly-silicon structure arranged on the substrate, where a base surface of the gate follows a circular line with respect to a vertical symmetry axis.