PDMS - - METHODS OF MANUFACTURING ALUMINIUM-INDIUM ZINC OXIDE SEMICONDUCTOR THIN FILM TRANSISTOR USING PDMS PASSIVATINION LAYER AND ALUMINIUM-INDIUM ZINC OXIDE SEMICONDUCTOR THIN FILM TRANSISTOR MANUFACTURED BY THE METHODS

摘要

A method of manufacturing an aluminum-indium zinc oxide semiconductor thin film transistor is disclosed. In the aluminum-indium zinc oxide semiconductor thin film transistor, a gate electrode is formed on a substrate, and a gate insulating film is formed on the substrate to cover the gate electrode. A precursor solution in which a zinc precursor, an indium precursor, and an aluminum precursor are dissolved is coated on the gate insulating film to form a semiconductor active layer, and then a source electrode and a drain electrode are formed on the semiconductor active layer.