OXIDE THIN FILM TRANSISTOR USING AN AMORPHOUS ZINC OXIDE SEMICONDUCTOR AS AN ACTIVE LAYER AND A MANUFACTURING METHOD THEREOF

摘要

PURPOSE: An oxide thin film transistor and a manufacturing method thereof are provided to improve a device property by preventing the deterioration of a back channel through a SiOx based protection layer.;CONSTITUTION: A gate electrode is formed on a substrate. A gate insulation layer(115a) is formed on the substrate with the gate electrode. An active layer(124) comprised of an amorphous zinc oxide semiconductor is formed on the gate insulation layer. A source electrode and a drain electrode are formed on the substrate with the active layer. A protection layer(115b) with a composition ratio of 1.96 to 2.5 is formed on the substrate with the source electrode and the drain electrode. A contact hole is formed to expose a part of the drain electrode by partially removing the protection layer. A pixel electrode electrically connected to the drain electrode is formed through a contact hole.;COPYRIGHT KIPO 2011