Thin film transistor performance of amorphous indium-zinc oxide semiconductor thin film prepared by ultraviolet photoassisted sol-gel processing

摘要

We have fabricated an amorphous indium-zinc oxide (IZO, In/Zn = 3/1) semiconductor thin-film transistor (AOS-TFT) by the sol-gel technique using ultraviolet (UV) photoirradiation and post-treatment in high-pressure O-2 at 200 degrees C. The obtained TFT showed a hole carrier mobility of 0.02 cm(2) V-1 s(-1) and an on/off current ratio of 10(6). UV photoirradiation leads to the decomposition of the organic agents and hydroxide group in the IZO gel film. Furthermore, the post-treatment annealing at a high O-2 pressure of more than 0.6 MPa leads to the filling of the oxygen vacancies in a poor metal-oxygen network in the IZO film. (C) 2018 The Japan Society of Applied Physics