Amorphous Indium-Zinc Oxide Semiconductor Thin-Film Transistors

摘要

We report on the performance and electrical properties of sputtering-processed amorphous indium-zinc oxide (alpha-IZO) thin-film transistors (TFTs). We were able to modulate the Ar and O components by changing the partial pressure. Additionally, the chemical composition of alpha-IZO had a significant effect on the field-effect mobility (mu(FE)), carrier concentration, and subthreshold swing (SS) of the device. Sputtering-processed alpha-IZO TFTs were fabricated with an on/off current ratio of similar to 10(7), a high mobility of 38.7 cm(2)/Vs, and a subthreshold slope as steep as 0.16 V/dec. Our results indicate that high-performance alpha-IZO TFTs can be successfully and easily fabricated using the sputtering process.