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AMORPHOUS OXIDE SEMICONDUCTOR THIN-FILM, ITS FORMING METHOD, MANUFACTURING PROCESS OF THIN-FILM TRANSISTOR, FIELD EFFECT TRANSISTOR, LIGHT-EMITTING DEVICE, DISPLAY AND SPUTTERING TARGET
AMORPHOUS OXIDE SEMICONDUCTOR THIN-FILM, ITS FORMING METHOD, MANUFACTURING PROCESS OF THIN-FILM TRANSISTOR, FIELD EFFECT TRANSISTOR, LIGHT-EMITTING DEVICE, DISPLAY AND SPUTTERING TARGET
PROBLEM TO BE SOLVED: To provide an amorphous oxide semiconductor thin-film which is insoluble to a phosphorous acid based etching liquid and soluble to an oxalic acid based etching liquid by rationalizing the amount of indium, tin and zinc, and to provide its forming method.;SOLUTION: The image display 3 comprises a glass substrate 10, a liquid crystal 40 as a light control element, a bottom gate type thin-film transistor 1 for driving the liquid crystal 40, a pixel electrode 30 and a counter electrode 50 wherein the amorphous oxide semiconductor thin-film 2 of the bottom gate type thin-film transistor 1 has a carrier density below 10+18 cm-3. Furthermore, it is insoluble to the phosphorous acid based etching liquid and soluble to the oxalic acid based etching liquid.;COPYRIGHT: (C)2009,JPO&INPIT
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机译:解决的问题:通过合理化铟,锡和锌的量,提供一种不溶于亚磷酸基蚀刻液而可溶于草酸基蚀刻液的非晶氧化物半导体薄膜,并提供其形成方法解决方案:图像显示器3包括玻璃基板10,作为光控元件的液晶40,用于驱动液晶40的底栅型薄膜晶体管1,像素电极30和对电极50,其中底栅型薄膜晶体管1的非晶氧化物半导体薄膜2的载流子密度低于10 +18 Sup> cm -3 Sup>。而且,它不溶于亚磷酸基蚀刻液,而可溶于草酸基蚀刻液。;版权所有:(C)2009,JPO&INPIT
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