Switching Control Model of Closed-Mode Structures in Large Rectangular Cavities Based on AlGaAs/InGaAs/GaAs Laser Heterostructures

摘要

A lumped model of the dynamics of the controlled switching of high-Q closed-mode structures in rectangular large cavities (up to 1 x 1 mm and larger) based on AlGaAs/InGaAs/GaAs laser heterostructures is presented. The model considers the modulation of the useful power of a closed-mode structure due to controlled generation switching to an alternative closed mode. Generation-switching control between closed mode structures is implemented due to a variation in the optical loss of one structure. A variation in the optical loss occurs due to an increase in interband optical absorption due to the quantum-confined Stark effect upon the application of voltage to a laser crystal segment in the closed-mode propagation region.