Effect of Epitaxial-Structure Design and Growth Parameters on the Characteristics of Metamorphic Lasers of the 1.46-μm Optical Range Based on Quantum Dots Grown on GaAs Substrates

摘要

The characteristics of lasers of the 1.44–1.46-μm optical range grown on GaAs substrates using a metamorphic buffer are studied. The active region of the laser contains 10 rows of InAs/In~(0.4)Ga~(0.6)As/In~(0.2)Ga~(0.8)As quantum dots. It is shown that the use of special selective high-temperature annealing along with the application of short-period In~(0.2)Ga~(0.8)As/In~(0.2)Al~(0.3)Ga~(0.5)As short-period superlattices makes it possible to substantially decrease the density of threading dislocations in the active region. A?threshold current density of 1300 A cm_(–2), external differential quantum efficiency of 38%, and maximal pulsed-mode output power of 13 W are attained for a laser with a broad area 3 mm in length.