Optical and Structural Properties of InAs Quantum Dots Emitting near 1.5驴m Grown on a GaAs substrate with an Inx, Ga1-xAs Metamorphic Buffer Layer

摘要

The structural and optical properties of InAs quantum dots (QDs) grown on an Inx, Ga1-xAs metamorphic layer, with different x values, on GaAs substrates are presented. The results for various QD layer thicknesses and growth temperatures are reported. The density of the dots and their diameter increase as the In content in the metamorphic layer increases. For a layer of dots grown in a strained InGaAs quantum well, incorporated in a metamorphic layer with 30% In, room temperature photoluminescence emission at 1.57 驴m has been demonstrated.