机译:N-和P型调制的光学性能掺杂Gaasbi / Algaas量子阱结构
Istanbul Univ Dept Phys Fac Sci TR-34134 Istanbul Turkey;
Istanbul Univ Dept Phys Fac Sci TR-34134 Istanbul Turkey;
Istanbul Univ Dept Phys Fac Sci TR-34134 Istanbul Turkey;
Istanbul Univ Dept Phys Fac Sci TR-34134 Istanbul Turkey;
Tampere Univ Technol Optoelect Res Ctr Tampere 33720 Finland;
Tampere Univ Technol Optoelect Res Ctr Tampere 33720 Finland;
Istanbul Univ Dept Phys Fac Sci TR-34134 Istanbul Turkey;
Tampere Univ Technol Optoelect Res Ctr Tampere 33720 Finland;
GaAsBi; Dilute bismide; n-type GaAsBi; p-type GaAsBi; Recombination mechanisms in GaAsBi;
机译:N-和P型调制的光学性能掺杂Gaasbi / Algaas量子阱结构
机译:p型调制掺杂GaAs / AlGaAs量子阱的光学性质
机译:n型调制掺杂Algaas / Gaasbi量子阱异质结构的功率丢失机制
机译:磁芯致发光在N-和P型Si调制掺杂的AlgaAs / GaAs单异质结构中
机译:调制掺杂的Si / SiGe量子阱结构的传输性质。
机译:退火生长的n型和p型调制掺杂GaInNAs / GaAs应变量子阱结构的磁输运研究
机译:退火生长的n型和p型调制掺杂GaInNAs / GaAs应变量子阱结构的磁输运研究
机译:n型和p型假晶调制掺杂场效应晶体管的能带结构和电荷控制研究