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机译:在低温下在n型和p型4H-SiC上同时形成欧姆触点
Xidian Univ Sch Microelect Key Lab Wide Band Gap Semicond Technol Xian 710071 Shaanxi Peoples R China;
Xidian Univ Sch Microelect Key Lab Wide Band Gap Semicond Technol Xian 710071 Shaanxi Peoples R China;
Xidian Univ Sch Microelect Key Lab Wide Band Gap Semicond Technol Xian 710071 Shaanxi Peoples R China;
Xidian Univ Sch Microelect Key Lab Wide Band Gap Semicond Technol Xian 710071 Shaanxi Peoples R China;
Xidian Univ Sch Microelect Key Lab Wide Band Gap Semicond Technol Xian 710071 Shaanxi Peoples R China;
Xidian Univ Sch Microelect Key Lab Wide Band Gap Semicond Technol Xian 710071 Shaanxi Peoples R China;
Xidian Univ Sch Microelect Key Lab Wide Band Gap Semicond Technol Xian 710071 Shaanxi Peoples R China;
Xidian Univ Sch Microelect Key Lab Wide Band Gap Semicond Technol Xian 710071 Shaanxi Peoples R China;
Xidian Univ Sch Microelect Key Lab Wide Band Gap Semicond Technol Xian 710071 Shaanxi Peoples R China;
Xidian Univ Sch Microelect Key Lab Wide Band Gap Semicond Technol Xian 710071 Shaanxi Peoples R China;
SiC; Rapid temperature annealing; Ohmic contact; Ni/Ti/Al/W;
机译:在低温下在n型和p型4H-SiC上同时形成欧姆触点
机译:与低温形成的p型4H-SiC具有温度稳定性的Pd欧姆接触
机译:在低退火温度下与n型4H-SiC形成欧姆接触
机译:在低退火温度下形成N型4H-SiC的欧姆触点
机译:欧姆触点是同性境生长的p型和n型锗
机译:p型注入4H-SiC上形成的欧姆接触的纳米级电结构表征
机译:低温Ni-Al欧姆接触P型4H-SiC使用半蒜水处理