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METHOD OF FORMING AN OHMIC CONTACT ON A P-TYPE 4H-SIC SUBSTRATE
METHOD OF FORMING AN OHMIC CONTACT ON A P-TYPE 4H-SIC SUBSTRATE
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机译:在P型4H-SIC基板上形成欧姆接触的方法
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摘要
A method of forming an Ohmic contact on a P-type 4H—SiC and an Ohmic contact formed by the same are provided. A method of forming an Ohmic contact on a P-type 4H—SiC substrate including a deposition step of successively depositing a 1 to 60 nm thick first Al layer, Ti layer, and second Al layer on a P-type 4H—SiC substrate and an alloying step of forming an alloy layer between the SiC substrate and the Ti layer through the first Al layer by heat treatment in a nonoxidizing atmosphere. An Ohmic contact on a P-type 4H—SiC substrate formed by this method is also provided.
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