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机译:层和堆叠序列在同时生长2H和3RWS2原子层中的影响
Yanshan Univ Ctr High Pressure Sci State Key Lab Metastable Mat Sci &
Technol Qinhuangdao 066004 Hebei Peoples R China;
Yanshan Univ Ctr High Pressure Sci State Key Lab Metastable Mat Sci &
Technol Qinhuangdao 066004 Hebei Peoples R China;
Univ Sci &
Technol China Int Ctr Quantum Design Funct Mat ICQD Hefei Natl Lab Phys Sci Microscale Hefei 230026 Anhui Peoples R China;
Univ Sci &
Technol China Int Ctr Quantum Design Funct Mat ICQD Hefei Natl Lab Phys Sci Microscale Hefei 230026 Anhui Peoples R China;
Yanshan Univ Ctr High Pressure Sci State Key Lab Metastable Mat Sci &
Technol Qinhuangdao 066004 Hebei Peoples R China;
Yanshan Univ Ctr High Pressure Sci State Key Lab Metastable Mat Sci &
Technol Qinhuangdao 066004 Hebei Peoples R China;
Yanshan Univ Ctr High Pressure Sci State Key Lab Metastable Mat Sci &
Technol Qinhuangdao 066004 Hebei Peoples R China;
Yanshan Univ Ctr High Pressure Sci State Key Lab Metastable Mat Sci &
Technol Qinhuangdao 066004 Hebei Peoples R China;
Yanshan Univ Ctr High Pressure Sci State Key Lab Metastable Mat Sci &
Technol Qinhuangdao 066004 Hebei Peoples R China;
Yanshan Univ Ctr High Pressure Sci State Key Lab Metastable Mat Sci &
Technol Qinhuangdao 066004 Hebei Peoples R China;
Yanshan Univ Ctr High Pressure Sci State Key Lab Metastable Mat Sci &
Technol Qinhuangdao 066004 Hebei Peoples R China;
Yanshan Univ Ctr High Pressure Sci State Key Lab Metastable Mat Sci &
Technol Qinhuangdao 066004 Hebei Peoples R China;
Univ Sci &
Technol China Int Ctr Quantum Design Funct Mat ICQD Hefei Natl Lab Phys Sci Microscale Hefei 230026 Anhui Peoples R China;
Yanshan Univ Ctr High Pressure Sci State Key Lab Metastable Mat Sci &
Technol Qinhuangdao 066004 Hebei Peoples R China;
Yanshan Univ Ctr High Pressure Sci State Key Lab Metastable Mat Sci &
Technol Qinhuangdao 066004 Hebei Peoples R China;
tungsten disulfide; Raman; photoluminescence; multilayer; stacking order;
机译:层和堆叠序列在同时生长2H和3RWS2原子层中的影响
机译:通过低能原子分辨率扫描透射电子显微镜识别几层CVD生长的MoS2中的不同堆叠顺序
机译:通过原子层沉积生长的ZnO / TiO_x堆叠层中电子弱局部化的尺寸跨度
机译:在InAlAs衬底上通过原子层沉积生长的HfO2 / Al2O3栅介电纳米堆叠的表征
机译:原子层沉积(ALD),用于高级栅堆叠应用和生产线的ULSI前端(FEOL)。
机译:组成界面和沉积顺序对原子层沉积在硅上生长的纳米Ta2O5-Al2O3薄膜电学性能的影响
机译:原子分辨率观测连续界面 在siO2上生长的mos2单层和Ws2 / mos2异二层