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Light-emitting semiconductor component has epitaxially grown semiconductor layer sequence with sublayer suitable for light generation and electrical contacts, which are contacting semiconductor layer sequence

机译:发光半导体部件具有外延生长的半导体层序列,该子层具有适合于发光的子层和与半导体层序列接触的电接触

摘要

The light-emitting semiconductor component has an epitaxially grown semiconductor layer sequence with a sublayer (20) suitable for light generation. The sublayer has a main side and a side, opposite to the main side. Two electrical contacts (24,25) are provided, which are contacting the semiconductor layer sequence. Two interconnected radiation surfaces are provided for the generated light in an operation. The interconnected radiation surfaces run, particularly in parallel to the main sides. Independent claims are included for the following: (1) an illuminant; (2) a semiconductor arrangement, particularly a light-emitting diode arrangement such as light bulbs; and (3) an illuminant arrangement.
机译:发光半导体部件具有外延生长的半导体层序列,该半导体层序列具有适合于发光的子层(20)。子层具有主侧和与主侧相反的一侧。提供了两个电触点(24,25),它们接触半导体层序列。为手术中产生的光提供两个相互连接的辐射表面。相互连接的辐射面尤其平行于主侧面。包括以下方面的独立权利要求:(1)光源; (2)半导体装置,特别是诸如灯泡的发光二极管装置; (3)照明装置。

著录项

  • 公开/公告号DE102008008599A1

    专利类型

  • 公开/公告日2009-06-25

    原文格式PDF

  • 申请/专利权人 OSRAM OPTO SEMICONDUCTORS GMBH;

    申请/专利号DE20081008599

  • 发明设计人 HERRMANN SIEGFRIED;ADLHOCH THERESA;

    申请日2008-02-12

  • 分类号H01L33;H01L25/075;

  • 国家 DE

  • 入库时间 2022-08-21 19:09:15

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