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Light-emitting semiconductor component has epitaxially grown semiconductor layer sequence with sublayer suitable for light generation and electrical contacts, which are contacting semiconductor layer sequence
Light-emitting semiconductor component has epitaxially grown semiconductor layer sequence with sublayer suitable for light generation and electrical contacts, which are contacting semiconductor layer sequence
The light-emitting semiconductor component has an epitaxially grown semiconductor layer sequence with a sublayer (20) suitable for light generation. The sublayer has a main side and a side, opposite to the main side. Two electrical contacts (24,25) are provided, which are contacting the semiconductor layer sequence. Two interconnected radiation surfaces are provided for the generated light in an operation. The interconnected radiation surfaces run, particularly in parallel to the main sides. Independent claims are included for the following: (1) an illuminant; (2) a semiconductor arrangement, particularly a light-emitting diode arrangement such as light bulbs; and (3) an illuminant arrangement.
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