首页> 外文OA文献 >2D Semiconductors: Interfacial Band Engineering of MoS 2 /Gold Interfaces Using Pyrimidine‐Containing Self‐Assembled Monolayers: Toward Contact‐Resistance‐Free Bottom‐Contacts (Adv. Electron. Mater. 5/2020)

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2D Semiconductors: Interfacial Band Engineering of MoS 2 /Gold Interfaces Using Pyrimidine‐Containing Self‐Assembled Monolayers: Toward Contact‐Resistance‐Free Bottom‐Contacts (Adv. Electron. Mater. 5/2020)

机译：2D半导体：使用含有嘧啶的自组装单层的MOS 2 /金界面的界面带工程：朝向无抗性无阻的底触点（ADV。电子。Matter。5/2020）

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Aleksandar Matković; Andreas Petritz; Gerburg Schider; Markus Krammer; Markus Kratzer; Esther Karner‐Petritz; Alexander Fian; Herbert Gold; Michael Gärtner; Andreas Terfort; Christian Teichert; Egbert Zojer; Karin Zojer; Barbara Stadlober;
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1. Influence of Thiol Self-Assembled Monolayer Processing on Bottom-Contact Thin-Film Transistors Based on n-Type Organic Semiconductors [J] . Jangdae Youn, Ceetha R. Dholakia, Hui Huang, Advanced Functional Materials . 2012,第9期

机译：硫醇自组装单层工艺对基于n型有机半导体的底部接触薄膜晶体管的影响
2. Bottom-electrode induced defects in self-assembled monolayer (SAM)-based tunnel junctions affect only the SAM resistance, not the contact resistance or SAM capacitance [J] . Sangeeth C. S. Suchand, Jiang Li, Nijhuis Christian A. RSC Advances . 2018,第36期

机译：自组装单层（SAM）的隧道连接中的底电极诱导缺陷仅影响SAM电阻，而不是接触电阻或SAM电容
3. High-Density 3-D Interconnect of Cu–Cu Contacts With Enhanced Contact Resistance by Self-Assembled Monolayer (SAM) Passivation [J] . Peng L., Li H., Lim D. F., Electron Devices, IEEE Transactions on . 2011,第8期

机译：通过自组装单分子层（SAM）钝化提高接触电阻的高密度Cu-Cu触点3D互连
4. Characteristic Improvements for Bottom Contact OTFTs with Self-assembled Monolayer Formed by ALD [C] . H.Kim, J. Park, K. W. Bong, 2007亚洲显示国际会议 . 2007

机译：ALD形成的具有自组装单层底接触OTFT的特性改进
5. Making metal and semiconductor contacts on alkanethiolate self-assembled monolayers adsorbed on gold. [D] . Lu, Peng. 2009

机译：使硫烷烃自组装的单层吸附在金上，使金属和半导体接触。
6. Interfacial Properties of Monolayer and Bilayer MoS2 Contacts with Metals: Beyond the Energy Band Calculations [O] . Hongxia Zhong, Ruge Quhe, Yangyang Wang, -1

机译：MoS2单层和双层金属接触的界面性质：超出能带计算
7. Monolayers: Concurrent Growth and Formation of Electrically Contacted Monolayer Transition Metal Dichalcogenides on Bulk Metallic Patterns (Adv. Mater. Interfaces 4/2017) [O] . Sudiksha Khadka, Miles Lindquist, Shrouq H. Aleithan, 2017

机译：单层：在散装金属图案上同时生长和形成电联接单层过渡金属二甲基甲基甲基化物（ADV。母体。界面4/2017）
8. Chemically Sensitive Interfacial Force Microscopy: Contact Potential Measurementsof Self-Assembling Monolayer Films [R] . Thomas, R. C., Tangyunyong, P., Houston, J. E., 1993

机译：化学敏感界面力显微镜：接触自组装单层膜的电位测量

2D Semiconductors: Interfacial Band Engineering of MoS 2 /Gold Interfaces Using Pyrimidine‐Containing Self‐Assembled Monolayers: Toward Contact‐Resistance‐Free Bottom‐Contacts (Adv. Electron. Mater. 5/2020)

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