Characterization of HfO2/Al2O3 gate dielectric nanometer-stacks grown by atomic layer deposition on InAlAs substrates

摘要

We report the characteristics of HfO/AlO gate dielectric nanometer-stacks deposited on InAlAs at 245 °C by atomic layer deposition. The annealing effect on the interface and electrical properties of stack films was investigated by X-ray photoelectron spectroscopy, and electrical measurements. It is demonstrated that the resultant of AsO during annealing is suppressed by AlO layer. The annealed samples exhibit better electrical properties with hysteresis reduced, capacitance value elevated.