首页> 外文期刊>Physica, B. Condensed Matter >Behavior of 3d-transition metals in different SiC polytypes
【24h】

Behavior of 3d-transition metals in different SiC polytypes

机译:不同SiC多晶型3d过渡金属的行为

获取原文
获取原文并翻译 | 示例
获取外文期刊封面目录资料

摘要

The electronic and structural properties of isolated 3d-transition metal impurities in 3C-, 4H-, and 2H-SiC polytypes have been investigated by total energy ab initio methods. The configurational stability, spin states, formation and transition energies of substitutional (Si sub-lattice) Ti, V, and Cr impurities in several charge states have been computed. Our results are discussed in the context of available experimental data on electrically active centers in SiC. (c) 2005 Elsevier B.V. All rights reserved.
机译:通过总能量从头算方法研究了分离的3C-,4H-和2H-SiC多型3d-过渡金属杂质的电子和结构性质。计算了几种电荷态下取代(Si亚晶格)Ti,V和Cr杂质的构型稳定性,自旋态,形成能和跃迁能。我们的结果是在SiC中电活性中心的可用实验数据的背景下讨论的。 (c)2005 Elsevier B.V.保留所有权利。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号