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Method for producing a semiconductor layer of SiC of the 3C- polytype and a semiconductor device having an insulator between a carrier and the active semiconductor layer
Method for producing a semiconductor layer of SiC of the 3C- polytype and a semiconductor device having an insulator between a carrier and the active semiconductor layer
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机译:制造3C型多晶SiC半导体层的方法以及在载体和有源半导体层之间具有绝缘体的半导体器件
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摘要
In a method for producing a semiconductor layer (8) of SiC of the 3C- polytype on top of a semiconductor substrate layer (6) the wafer- bonding technique is utilised. Two amorphous layers are placed face to face and bonded by heating them, and the piece so obtained is annealed at such a high temperature that the material of the amorphous layers is allowed to flow for relaxing a 3C-SiC-layer (4) on top thereof. A second layer (8) of 3C-SiC is after that epitaxially regrown on top of said relaxed 3C-SiC- layer.
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