Fabrication of SiC super junction structure and analysis of electrical characteristics for power devices

摘要

In Si power devices, a new type of structure called Super Junction (SJ) has been proposed to reduce on-resistance. SiC is an attractive wide band gap semiconductor with high breakdown field. By applying the SJ structure to SiC, it is expected to achieve ultra low on-resistance for high voltage devices. Optimization of SiC SJ structure and analysis of SiC SJ device characteristics are performed using a device simulator. SiC SJ structure was fabricated by CVD growth. The SJ structure with uniform layer thickness and abrupt doping profile was realized.