Simulations on the Electrical Characteristics of Si, SiC and Diamond Junction andSchottky Power Diodes

摘要

The authors have studied the direct current properties of the alpha(6H)-SiC anddiamond pin-junction diodes and Schottky diodes. The studies have been made by using the simulation program SCORPIO, which solves the Poisson equation and the current continuity equations for the electrons and holes. The simulations are carried out for the temperatures 300 K, 500 K and 900 K. The results of the SiC and diamond diodes are compared with those of the structurally equivalent silicon structures. Usually, the comparison between the silicon and SiC/diamond power structures are made by considering the devices with equivalent breakdown voltages. In the simulation work it is easier to consider devices, which are structurally similar. So, the authors have chosen the similar structure approach over the equivalent breakdown voltage approach, although the latter points have received some attention in their calculations, too.