The Schottky electrode junction by the SiC semiconductor of the Schottky diode, the pn junction diode

摘要

PROBLEM TO BE SOLVED: To provide a high breakdown voltage diode that prevents leakage current from increasing, reliably stabilizes operation, at the same time, has a high yield in making area larger, and uses silicon carbide. SOLUTION: In the Schottky diode 10, where a Schottky electrode 15 is joined to a 4H-type SiC semiconductor 13, the orientation of an SiC semiconductor 13 that comes into contact with the Schottky electrode 15 should have a 03-38} surface, or a surface at an off angle that is within 10 deg. from the surface.