SiC Wide trench type SiC Junction barrier schottky diode and method of manufacturing the same

摘要

According to an aspect of the present invention, provided is a method for producing a SiC wide trench-type junction barrier Schottky diode. The method comprises the steps of: forming a SiC N-epitaxial layer; forming a trench which is concave downward; forming an oxide film mask; forming a P+ junction pattern; performing a primary annealing process; forming a Schottky metal layer; and performing a secondary annealing process.