SiC wide trench-type junction barrier Schottky diode and manufacturing method therefor

摘要

Disclosed is a SiC wide trench-type junction barrier Schottky diode. The Schottky diode includes a SiC N− epitaxial layer formed on a SiC N⁺-type substrate and a Schottky metal layer having a planar Schottky metal pattern layer and a downwardly depressed trench-type Schottky metal pattern layer, which are alternately formed at predetermined intervals and on the upper end part of the SiC N− epitaxial layer. The Schottky diode includes a P⁺ junction pattern formed so as to permeate from the lower part of the trench-type Schottky metal pattern layer to the SiC N− epitaxial layer and a cathode electrode formed on the lower part of the SiC N⁺-type substrate. The width of the P⁺ junction pattern is narrower than the width of the trench-type Schottky metal pattern layer, and the P⁺ junction pattern is not formed on a side wall vertical surface region of the trench-type Schottky metal pattern layer.