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Stability of Electrical Characteristics of SiC “Super ” Junction Transistors under Long- Term DC and Pulsed Operation at various Temperatures

机译：siC“超”结晶体管在不同温度下长期直流和脉冲工作时的电特性稳定性

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Siddarth G. Sundaresan; Aye-mya Soe; Ranbir Singh;
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1. Current Gain Stability of SiC Junction Transistors subjected to long-duration DC and Pulsed Current Stress [J] . Siddarth Sundaresan, Brian Grummel, Ranbir Singh Materials science forum . 2016,第期

机译：长期直流和脉冲电流应力作用下SiC结晶体管的电流增益稳定性
2. High-temperature characteristics of SiC module and 100 kW SiC AC-DC converter at a junction temperature of 180°C [J] . Juanjuan Lu, Zhe Zhou, Jianhong Hao, 全球能源互联网：英文版 . 2019,第006期

机译：结温为180°C时SiC模块和100 kW SiC AC-DC转换器的高温特性
3. High-temperature characteristics of SiC module and 100 kW SiC AC-DC converter at a junction temperature of 180 ℃ [J] . Juanjuan Lu, Zhe Zhou, Jianhong Hao, 全球能源互联网（英文版） . 2019,第006期

机译：结温为180℃时SiC模块和100 kW SiC AC-DC转换器的高温特性
4. Stability of Electrical Characteristics of SiC "Super" Junction Transistors under Long- Term DC and Pulsed Operation at various Temperatures [C] . Siddarth G. Sundaresan, Aye-Mya Soe, Ranbir Singh Materials Research Society Meeting . 2012

机译：在各种温度下长期直流和脉冲操作下SiC“超”结晶体管电特性的稳定性
5. Compact modeling of Silicon Carbide (SIC) Vertical Junction Field Effect Transistor (VJFET) in PSpice using Angelov model and PSpice simulation of analog circuit building blocks using SIC VJFET model. [D] . Purohit, Siddharth. 2006

机译：使用Angelov模型在PSpice中对碳化硅（SIC）垂直结场效应晶体管（VJFET）进行紧凑建模，并使用SIC VJFET模型对PSpice模拟电路构建模块进行仿真。
6. Periodically pulsed wet annealing approach for low-temperature processable amorphous InGaZnO thin film transistors with high electrical performance and ultrathin thickness [O] . Ye Kyun Kim, Cheol Hyoun Ahn, Myeong Gu Yun, -1

机译：具有高性能和超薄厚度的低温可加工非晶InGaZnO薄膜晶体管的周期性脉冲湿退火方法
7. High-Temperature Performance of MoS2 Thin-Film Transistors: DC and Pulse Current-Voltage Characteristics [O] . Jiang, C., Rumyantsev, S. L., Samnakay, R., 2014

机译：mos2薄膜晶体管的高温性能：直流和脉冲电流 - 电压特性
8. Contact Metallization and Packaging Technology Development for SiC Bipolar Junction Transistors, PiN Diodes, and Schottky Diodes Designed for Long-Term Operations at 350 degree C [R] . Williams, J. R. , Johnson, R. W. , Mohney, S. E. , 2006

机译：接触金属化和封装技术开发用于siC双极结晶体管，piN二极管和肖特基二极管，专为350°C的长期工作而设计

Stability of Electrical Characteristics of SiC “Super ” Junction Transistors under Long- Term DC and Pulsed Operation at various Temperatures

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