SIC JUNCTION FIELD EFFECT TRANSISTOR AND SIC COMPLEMENTARY JUNCTION FIELD EFFECT TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide a SiC junction field effect transistor capable of stable operation in a wide temperature range and easily producing a complementary JFET.;SOLUTION: The SiC junction type field effect transistor includes: a source region 11 and a drain region 12 of a first conductivity type formed apart from each other on a main surface of a SiC substrate 10; a buried channel region 13 of the first conductivity type formed below the source region; and a pair of gate regions 14a, 14b of a second conductivity type formed on both sides of a region including at least the source region and the buried channel region, which is the main surface of the SiC substrate. The buried channel region and the drain region are connected by a buried impurity region 15 of the first conductivity type formed below the pair of gate regions.;SELECTED DRAWING: Figure 1;COPYRIGHT: (C)2019,JPO&INPIT